A novel approach for preparing Fe(TexSy) superconducting films: solid phase epitaxial growth from amorphous precursors
نویسندگان
چکیده
Fe(TexSy) films were fabricated on (100) SrTiO3 substrates from Fe(Te0.65S0.16) amorphous precursors by a solid phase epitaxial growth process under various background atmospheric conditions. Structural analysis by x-ray diffraction showed strong peaks corresponding to Fe(TexSy) phases, when the amorphous precursors were heated with Fe(Te0.8S0.2) sintered pellets. The crystallinity of the films deteriorated at longer periods of heating but the compositional shifts were found to have decreased. Consequently, the critical temperature, TCzero, of the Fe(TexSy) film with minimum compositional shift was found to be 9.0 K and critical current density, JC, of the film was about 1.4× 104 A cm−2. (Some figures may appear in colour only in the online journal)
منابع مشابه
Preparation of epitaxial PbTiO 3 thin films by metalorganic vapor phase epitaxy under reduced pressure
In this study PbTiO 3 thin films were deposited using metalorganic vapor phase epitaxy (MOVPE). Titanium-isopropoxide and tetraethyl-lead were used as the Ti and Pb precursors, and 0 2 was the oxidizing gas. A wide range of conditions for preparing high quality PbTiO 3 thin film were investigated. The epitaxial PbTiO 3 thin films were grown on (001) SrTiO 3 substrates at a growth temperature of...
متن کاملMolecular beam epitaxy of GeTe-Sb2Te3 phase change materials studied by X-ray diffraction
The integration of phase change materials into semiconductor heterostructures may lead to the development of a new generation of high density non-volatile phase change memories. Epitaxial phase change materials allow to study the detailed structural changes during the phase transition and to determine the scaling limits of the memory. This work is dedicated to the epitaxial growth of Ge-Sb-Te p...
متن کاملUltraviolet detectors based on annealed zinc oxide thin films: epitaxial growth and physical characterizations
In this report, ultraviolet (UV) detectors were fabricated based on zinc oxide thin films. The epitaxial growth of zinc oxide thin films was carried out on bare glass substrate with preferred orientation to (002) plane of wurtzite structure through radio frequency sputtering technique. The structural properties indicated a dominant peak at 2θ=34.28º which was matched with JCPDS reference card N...
متن کاملComparative Review on Thin Film Growth of Iron-Based Superconductors
Since the discovery of the novel iron-based superconductors, both theoretical and experimental studies have been performed intensively. Because iron-based superconductors have a smaller anisotropy than high-Tc cuprates and a high superconducting transition temperature, there have been a lot of researchers working on the film fabrication of iron-based superconductors and their application. Accor...
متن کاملLow temperature plasma deposition of silicon thin films: From amorphous to crystalline
We report on the epitaxial growth of crystalline silicon films on (100) oriented crystalline silicon substrates by standard plasma enhanced chemical vapor deposition at 175 °C. Such unexpected epitaxial growth is discussed in the context of deposition processes of silicon thin films, based on silicon radicals and nanocrystals. Our results are supported by previous studies on plasma synthesis of...
متن کامل